Nano-Dimensional Properties of Si-FinFET Transistor Based on ION/IOFF Ratio and Subthreshold Swing (SS)
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of Nanoscience and Technology
سال: 2018
ISSN: 2455-0191
DOI: 10.30799/jnst.132.18040408